AlGaN

Aluminum Gallium Nitride (AlGaN) is a ternary alloy semiconductor material composed of aluminum nitride (AlN) and gallium nitride (GaN). It is widely studied for its wide bandgap properties, high electron mobility, and high breakdown voltage, making it suitable for high-power, high-frequency, and high-temperature electronic devices. / 铝镓氮是一种由氮化铝和氮化镓组成的三元合金半导体材料。它具有宽禁带特性、高电子迁移率和高击穿电压，适用于高功率、高频和高温电子器件。

Knowledge type

物理设备

First proposed or discovered

Proposer

Turkey Farm member

Creator

农场主

Last updated

2026-10-08 07:54:28