semiconductor fabrication and lithography
AlGaN UVC LED异质结构
AlGaN UVC LED heterostructureA semiconductor device structure composed of Aluminum Gallium Nitride (AlGaN) grown at low temperatures, designed to emit Ultraviolet C (UVC) light for applications such as sterilization and water purification. / 一种由低温生长的氮化铝镓（AlGaN）构成的半导体器件结构，旨在发射紫外C（UVC）光，用于消毒和净化水等应用。
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- 实际应用
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- Turkey Farm member
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- 农场主
- Last updated
- 2026-10-31 21:05:48
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Main parameters and performance indicators
Material: AlGaNWavelength: UVC (200-280 nm)Growth Temperature: Low temperature
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Related literature
ranked by community starsOptimization of TMAl preflow for low temperature grown AlN for AlGaN UVC LED heterostructureOpen source
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1 recordsRecord title: AlGaN UVC LED heterostructure.
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