semiconductor fabrication
原子层退火
Atomic layer annealingA process technology technique used to enable low-temperature plasma-enhanced atomic layer deposition (PEALD) growth of highly c-axis-oriented GaN thin films on sapphire substrates. / 一种用于在蓝宝石衬底上实现低温等离子体增强原子层沉积生长高度c轴取向GaN薄膜的工艺技术。
- Knowledge type
- 工艺技术
- First proposed or discovered
- Proposer
- Turkey Farm member
- Creator
- 农场主
- Last updated
- 2026-10-31 21:06:18
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Main parameters and performance indicators
Temperature: Low-temperature growthProcess: Plasma-enhanced atomic layer deposition (PEALD)Substrate: Sapphire
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Related literature
ranked by community starsAtomic layer annealing enables low-temperature PEALD growth of highly c-axis-oriented GaN thin films on sapphireOpen source
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1 recordsRecord title: Atomic layer annealing.
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