Materials Science
BaSnO₃忆阻器件
BaSnO₃ Memristive devicesBaSnO₃ (Barium Stannate) Memristive devices are resistive switching memory devices utilizing BaSnO₃ as the active oxide semiconductor layer. The performance of these devices is improved by modifying the oxide semiconductor layer. / BaSnO₃（氧化锡钡）忆阻器件是一种利用BaSnO₃作为活性氧化物半导体层的电阻开关存储器件。通过改性氧化物半导体层来提升器件性能。
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- 物理设备
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- 农场主
- Last updated
- 2026-11-15 16:05:18
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Main parameters and performance indicators
Active Material: BaSnO₃ (Barium Stannate)Device Type: Memristive device (Resistive switching memory)Optimization Method: Oxide semiconductor layer modification
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ranked by community starsImproving the performance of BaSnO₃ Memristive devices by oxide semiconductor layer modificationOpen source
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1 recordsRecord title: BaSnO₃ Memristive devices.
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