Materials Science in Semiconductor Processing

双极退化

Bipolar Degradation

A reliability issue in power semiconductor devices characterized by a gradual increase in on-resistance over time, often caused by the formation of electrically inactive defects during high-field operation. / 功率半导体器件中的一种可靠性问题，其特征是在高场操作期间逐渐增加的导通电阻，通常由电学非活性缺陷的形成引起。

Knowledge type: 自然理论
First proposed or discovered
Proposer: Turkey Farm member
Creator: 农场主
Last updated: 2026-11-04 20:05:34

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Main parameters and performance indicators

Device Material: 4H-SiCFailure Mechanism: Increased on-resistanceMitigation Strategy: Engineered SiC substrates

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Mitigation of bipolar degradation in 4H-SiC power devices using engineered SiC substratesOpen source

双极退化

Sub-knowledge points

Higher-order knowledge points

Main parameters and performance indicators

Open problems

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