electronics
基于S型负微分电阻的电容式砷化镓平面脉冲神经元
Capacitor-less GaAs planar spiking neurons based on S-type negative differential resistanceA solid-state electronic device architecture utilizing Gallium Arsenide (GaAs) planar structures and S-type negative differential resistance (NDR) to implement spiking neuron functions without an external capacitor. / 一种利用砷化镓平面结构和S型负微分电阻实现脉冲神经元功能的固态电子器件架构，无需外部电容。
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- 物理设备
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- 农场主
- Last updated
- 2026-11-08 21:05:41
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Material: Gallium Arsenide (GaAs)Resistance characteristic: S-type Negative Differential Resistance (NDR)Architecture: Planar
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