Materials Science
4H‑SiC晶体中的位错缺陷
Dislocation defects in 4H‑SiC crystalsDislocation defects in 4H‑SiC crystals refer to the line defects that occur during crystal growth, affecting material properties. / 4H‑SiC晶体中的位错缺陷是指在晶体生长过程中产生的线缺陷，影响材料性能。
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- 2026-10-23 08:01:31
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ranked by community starsDislocation defects in 4H‑SiC crystals grown by physical vapor transport: Evolution, origins, and control strategiesOpen source
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