Materials Science
表面工程化BiVO4/碳量子点异质结光阳极
Surface-engineered BiVO4/carbon quantum dot heterojunction photoanodesA photoelectrochemical device architecture consisting of a bismuth vanadate (BiVO4) semiconductor surface modified with carbon quantum dots (CQDs) to enhance water oxidation performance. / 一种光阳极器件架构，由表面修饰了碳量子点（CQDs）的钒酸铋（BiVO4）半导体组成，旨在提升析氧性能。
- Knowledge type
- 物理设备
- First proposed or discovered
- Proposer
- Turkey Farm member
- Creator
- 农场主
- Last updated
- 2026-10-23 07:01:05
Sub-knowledge points
No connected node yet
Higher-order knowledge points
No connected node yet
Main parameters and performance indicators
BiVO4: Bismuth vanadate semiconductorCQDs: Carbon quantum dots modificationHeterojunction: Interface between BiVO4 and CQDs
Open problems
No unresolved problem recorded yet
Related literature
ranked by community starsSurface-engineered BiVO4/carbon quantum dot heterojunction photoanodes for enhanced photoelectrochemical water oxidationOpen source
Related products and links
No item recorded yet
Creation and modification trail
1 recordsRecord title: Surface-engineered BiVO4/carbon quantum dot heterojunction photoanodes.
Node update feedback
review required