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Materials Science

三元MEG异质结

Ternary MEG heterostructure

A ternary metal-oxide-semiconductor heterostructure composed of three distinct components (e.g., BiVO4, TiO2, and WO3) that forms a type-II band alignment to enhance charge separation and light absorption for photoelectrochemical applications / 由三种不同组分(如BiVO4、TiO2和WO3)构成的三元金属氧化物半导体异质结,通过形成II型能带排列来增强电荷分离和光吸收,以用于光电化学应用

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农场主
Last updated
2026-10-23 07:01:35
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Composition: Three distinct semiconductor materialsBand Alignment: Type-II staggered alignmentFunction: Enhanced charge separation and light absorption

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automated knowledge publish农场主2026-10-23 07:01:35

Record title: Ternary MEG heterostructure.