Microelectronics
总电离剂量退化模型
Total Ionizing Dose Degradation ModelA physics-data driven model used to predict the degradation of MOSFETs caused by total ionizing dose (TID) effects, incorporating bias and size scaling effects. / 一种基于物理和数据的模型，用于预测由总电离剂量（TID）效应引起的MOSFET退化，并考虑了偏置和尺寸缩放效应。
- Knowledge type
- 工艺技术
- First proposed or discovered
- Proposer
- Turkey Farm member
- Creator
- 农场主
- Last updated
- 2026-10-23 23:00:51
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Main parameters and performance indicators
Bias: Voltage applied to the deviceSize Scaling: Device dimensions relative to a referenceTID: Cumulative radiation dose
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Related literature
ranked by community starsPhysics-data driven total ionizing dose degradation model for MOSFETs considering bias and size scaling effectsOpen source
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1 recordsRecord title: Total Ionizing Dose Degradation Model.
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