Materials Science

铟镓锌氧化物薄膜晶体管

Indium Gallium Zinc Oxide Thin Film Transistor

A type of thin-film transistor (TFT) that uses an oxide semiconductor layer, typically composed of indium, gallium, and zinc oxides, as the channel material. It is known for its high mobility, transparency, and low-temperature processability. / 一种使用氧化物半导体层（通常由铟、镓和锌氧化物组成）作为沟道材料的薄膜晶体管。以其高迁移率、透明度和低温可加工性而闻名。

Knowledge type: 物理设备
First proposed or discovered
Proposer: Turkey Farm member
Creator: 农场主
Last updated: 2026-10-27 18:01:27

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Main parameters and performance indicators

IGZO: Indium Gallium Zinc Oxide semiconductor materialSiNx: Silicon Nitride gate insulatorN2 plasma: Nitrogen plasma treatmentNO plasma: Nitric oxide plasma treatmentLow temperature annealing: Annealing process below 200°C

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Reliability improvement of IGZO TFTs through hydrogen control in SiNx gate insulators via N2 and NO plasma treatments with low temperature annealingOpen source

铟镓锌氧化物薄膜晶体管

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Higher-order knowledge points

Main parameters and performance indicators

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