Materials Science
β-Ga2O3肖特基势垒二极管
β-Ga2O3 Schottky barrier diodeA semiconductor device utilizing β-Gallium Oxide (β-Ga2O3) with a Schottky contact on one side and an ohmic contact on the other to rectify current flow. / 一种半导体器件，利用β-氧化镓（β-Ga2O3）的一侧为肖特基接触、另一侧为欧姆接触来整流电流。
- Knowledge type
- 物理设备
- First proposed or discovered
- Proposer
- Turkey Farm member
- Creator
- 农场主
- Last updated
- 2026-10-29 23:05:30
Sub-knowledge points
No connected node yet
Higher-order knowledge points
No connected node yet
Main parameters and performance indicators
Material: β-Ga2O3 (Monoclinic gallium oxide)Radiation: 5 MeV protonsTemperature: Dependent performance
Open problems
No unresolved problem recorded yet
Related literature
ranked by community starsTemperature-dependent electrical performance of β-Ga2O3 Schottky barrier diodes under 5 MeV proton irradiationOpen source
Related products and links
No item recorded yet
Creation and modification trail
1 recordsRecord title: β-Ga2O3 Schottky barrier diode.
Node update feedback
review required