medical imaging physics

横向门控雪崩二极管

Lateral Gated Avalanche Diode

A solid-state detector technology that integrates a lateral gate structure to control the avalanche multiplication process, enabling precise timing resolution and high signal-to-noise ratio. / 一种集成了横向门控结构的固态探测器技术，能够控制雪崩倍增过程，从而实现精确的时间分辨率和高信噪比。

Knowledge type: 物理设备
First proposed or discovered
Proposer: Turkey Farm member
Creator: 农场主
Last updated: 2026-10-30 17:05:30

Sub-knowledge points

Avalanche MultiplicationLateral Gate ControlFast Charge CollectionTime-Resolved Detection

Higher-order knowledge points

Silicon DetectorsTime-of-Flight (ToF) ImagingSynchrotron Radiation Detection

Main parameters and performance indicators

Gain: Internal amplification factor of the avalanche processTiming Resolution: Precision of the time measurementGate Voltage: Control parameter for the avalanche triggerDepletion Region: Area where charge carriers are generated

Open problems

Optimizing the trade-off between gain and timing jitterScalability for large-area detector arraysRadiation hardness in high-flux environments

Related literature

ranked by community stars

Exploring the response of LGADs for time resolved synchrotron applicationsOpen source

横向门控雪崩二极管

Sub-knowledge points

Higher-order knowledge points

Main parameters and performance indicators

Open problems

Related products and links