Electrical Engineering

陷阱辅助传导

Trap Assisted Conduction

A conduction mechanism in insulating materials where charge carriers are trapped at defect states within the band gap and subsequently released to the conduction band, facilitating current flow. / 一种绝缘材料中的导电机制，其中载流子被捕获在带隙内的缺陷态中，随后释放到导带以促进电流流动。

Knowledge type: 自然理论
First proposed or discovered
Proposer: Turkey Farm member
Creator: 农场主
Last updated: 2026-10-30 17:06:01

Sub-knowledge points

Space Charge Limited Current (SCLC)Poole-Frenkel emissionThermally Stimulated Current (TSC)

Higher-order knowledge points

Defect EngineeringRadiation Effects in Semiconductors

Main parameters and performance indicators

Trap density: Number of defect states available for carrier captureTrap energy level: Depth of defect states within the band gapThermal activation energy: Energy required to release carriers from traps

Open problems

Precise quantification of trap distribution in complex oxidesUnderstanding long-term stability of trap states under continuous irradiation

Related literature

ranked by community stars

Dose dependent amorphization and trap assisted conduction in gamma and X-ray irradiated SiO2: Structural and electrical evidence for defect engineeringOpen source

陷阱辅助传导

Sub-knowledge points

Higher-order knowledge points

Main parameters and performance indicators

Open problems

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