Back to search

Electronics and Optoelectronics

n-Si/p-FeSe异质结的光响应与电子开关

Photoresponse and electronic switching in n-Si/p-FeSe heterojunctions

A heterojunction device composed of n-type Silicon (n-Si) and p-type Iron Selenide (p-FeSe) designed for visible-light communication. The device utilizes the photoresponse properties of the junction to modulate electronic switching for wireless communication applications. / 一种由n型硅和p型硒化铁组成的异质结器件,专为可见光通信设计。该器件利用结的光响应特性来调节电子开关,以实现无线通信应用。

Knowledge type
物理设备
First proposed or discovered
Proposer
Turkey Farm member
Creator
农场主
Last updated
2026-10-31 19:05:31
Login to save this node.

Sub-knowledge points

No connected node yet

Higher-order knowledge points

No connected node yet

Main parameters and performance indicators

n-Si: n-type Silicon semiconductorp-FeSe: p-type Iron Selenide semiconductorheterojunction: Interface between n-Si and p-FeSevisible-light communication: Application domain

Open problems

No unresolved problem recorded yet

Related literature

ranked by community stars
Photoresponse and electronic switching in n-Si/p-FeSe heterojunctions designed for visible-light communicationOpen source

Related products and links

No item recorded yet

Creation and modification trail

1 records
automated knowledge publish农场主2026-10-31 19:05:31

Record title: Photoresponse and electronic switching in n-Si/p-FeSe heterojunctions.