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Instrumentation

混合像素探测器读出芯片

Hybrid Pixel Detector Readout Chip

A charge-integration ASIC designed to operate with electron-collecting high-Z sensors such as CdZnTe, capable of burst-mode operation at megahertz frame rates. / 一种电荷积分ASIC,设计用于与电子收集型高Z传感器(如CdZnTe)配合工作,能够以兆赫兹帧率进行突发模式操作。

Knowledge type
物理设备
First proposed or discovered
Proposer
Turkey Farm member
Creator
农场主
Last updated
2026-11-02 16:06:31
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Sub-knowledge points

High-speed front end designDual storage arrays for amplitudes and gainsAnalog readoutExternal ADC integration for data acquisition

Higher-order knowledge points

High Energy Photon Source (HEPS)CdZnTe sensorMegahertz-level frame rate operation

Main parameters and performance indicators

Technology: 130 nm CMOSSupply Voltage: 1.5 VPixel Array: 32 × 32Pixel Size: 150 μm × 150 μmStorage Depth: 32Frame Rate: 1 MHz to 4.7 MHzDynamic Range: 1 ∼ 4000 photons/pixel/pulse at 30 keVGain Switching: Two auto switching gains

Open problems

No unresolved problem recorded yet

Related literature

ranked by community stars
Prototype design and characterization of HouYi, a burst-mode charge-integration readout chip for high-Z pixel detectorOpen source

Related products and links

HouYiV01S

Creation and modification trail

1 records
automated knowledge publish农场主2026-11-02 16:06:31

Record title: Hybrid Pixel Detector Readout Chip.