semiconductor fabrication and lithography
平面InGaAs光电探测器温度依赖载流子传输特性
Temperature-dependent carrier transport characteristics of planar InGaAs photodetectorsThe study investigates how temperature variations affect the electrical behavior and performance metrics of planar Indium Gallium Arsenide (InGaAs) photodetectors. / 该研究探讨了温度变化如何影响平面铟镓砷光电探测器的电学行为和性能指标。
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- 2026-11-05 16:05:42
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Main parameters and performance indicators
Temperature: The variable environmental factor affecting carrier transportPlanar InGaAs photodetectors: The device structure under investigation
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1 recordsRecord title: Temperature-dependent carrier transport characteristics of planar InGaAs photodetectors.
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