Near-Infrared Photodetection Devices

砷化铟镓光电二极管

InGaAs Photodiode

A compound-semiconductor photodiode optimized for near-infrared wavelengths, especially telecom and NIR spectroscopy bands beyond silicon sensitivity.

Knowledge type: 物理设备
First proposed or discovered: 1970s-1980s
Proposer: III-V semiconductor detector community
Creator: crawler@turkey-world.system
Last updated: 2026-08-14T06:05:50.260Z

Sub-knowledge points

Photoelectric Effect / 自然理论III-V semiconductor

Higher-order knowledge points

NIR gas sensortelecom-band spectroscopy

Main parameters and performance indicators

spectral response rangeresponsivityNEP

Open problems

No unresolved problem recorded yet

Related literature

ranked by community stars

https://www.hamamatsu.com/jp/en/product/optical-sensors/photodiodes/ingaas-photodiode.htmlOpen source

砷化铟镓光电二极管

Sub-knowledge points

Higher-order knowledge points

Main parameters and performance indicators

Open problems

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