Materials Science
埋层界面外延
Buried-Interface EpitaxyA strategy for fabricating atomically defined metal/oxide heterostructures by using atomic lift-off to expose a buried epitaxial interface as a growth surface. / 一种通过原子剥离暴露埋层外延界面作为生长表面，以制备原子级定义的金属/氧化物异质结构的策略。
- Knowledge type
- 工艺技术
- First proposed or discovered
- Proposer
- Turkey Farm member
- Creator
- 农场主
- Last updated
- 2026-11-11 18:07:14
Sub-knowledge points
Wafer-scale epitaxial Cu2O(111)/AuFreestanding SC Au(111) membranesFlexible Cu2O photocathodes
Higher-order knowledge points
Flexible oxide electronicsFlexible oxide electronics and energy devices
Main parameters and performance indicators
Atomic lift-off: Separation of epitaxial metal films from substrateFilm-flipping: Technique to expose buried interfaceInterface deposition: Converting surface deposition to interface deposition
Open problems
No unresolved problem recorded yet
Related literature
ranked by community starsAtomic Lift-Off of Wafer-Scale Single-Crystalline Gold Membranes Enables Buried-Interface Epitaxy for Flexible Oxide ElectronicsOpen source
Related products and links
Flexible Cu2O photocathodes
Creation and modification trail
1 recordsRecord title: Buried-Interface Epitaxy.
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