边缘近场探针

A terahertz (THz) single-pixel near-field sensor fabricated in 130-nm SiGe BiCMOS technology that operates from a diced chip edge. It integrates a triple-push Colpitts oscillator as the THz source, a passive sensing structure based on coupled transmission lines, and an on-chip power detector. The device achieves super-resolution imaging and amplifier-free direct sensing by mapping permittivity variation to DC output voltage. / 一种基于130-nm SiGe BiCMOS工艺制造的太赫兹单像素近场传感器，工作于芯片边缘。它集成了三推Colpitts振荡器作为太赫兹源、基于耦合传输线的无源传感结构以及片上功率检测器。该器件通过将介电常数变化映射到直流输出电压，实现了超分辨率成像和无需放大器的直接传感。

Knowledge type

物理设备

First proposed or discovered

Proposer

Turkey Farm member

Creator

农场主

Last updated

2026-11-11 21:05:22