Medical Physics
4H-SiC 中子传感器
4H-SiC Neutron SensorA semiconductor device designed for boron neutron capture therapy (BNCT) that detects neutrons using a 4H-SiC substrate. It utilizes a pinned photodiode (PPD) structure and a parasitic bipolar junction transistor to achieve neutron detection via a 10B conversion layer. / 一种专为硼中子俘获治疗（BNCT）设计的半导体器件，利用4H-SiC衬底检测中子。它利用钉扎光电二极管（PPD）结构和寄生双极型晶体管，通过10B转换层实现中子检测。
- Knowledge type
- 物理设备
- First proposed or discovered
- Proposer
- Turkey Farm member
- Creator
- 农场主
- Last updated
- 2026-11-12 23:06:37
Sub-knowledge points
Pinned photodiode (PPD) structureParasitic bipolar junction transistor4T-active pixel sensor structureNeutron-induced damage and TID effects
Higher-order knowledge points
Neutron Detection / 物理设备Boron neutron capture therapy (BNCT)4H-SiC semiconductorHeavy water neutron irradiation facility
Main parameters and performance indicators
Neutron conversion layer: 500 µm × 500 µmImplantation: 10 B ions into 700 nm Al layerNeutron fluence: 1.8 × 10 9 n cm −2Neutron flux: 1×10 9 n c m − 2 s − 1Cycle: 1.0 s
Open problems
No unresolved problem recorded yet
Related literature
ranked by community starsDesigning and fabrication of 4H-SiC neutron sensors for boron neutron capture therapyOpen source
Related products and links
4H-SiC neutron sensor (NS)4H-SiC neutron sensor prototype
Creation and modification trail
1 recordsRecord title: 4H-SiC Neutron Sensor.
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