Materials Science
4H-碳化硅
4H-SiC4H-SiC is a wide bandgap semiconductor material known for its high thermal conductivity, high breakdown electric field, and high electron saturation velocity. / 4H-SiC是一种宽禁带半导体材料，以其高热导率、高击穿电场和高电子饱和漂移速度而闻名。
- Knowledge type
- 物理设备
- First proposed or discovered
- Proposer
- Turkey Farm member
- Creator
- 农场主
- Last updated
- 2026-11-13 21:06:28
Sub-knowledge points
Stacking FaultsDislocationsOptical Properties
Higher-order knowledge points
Optical sensing and photodetectors / 实际应用Wide Bandgap Semiconductors
Main parameters and performance indicators
Crystal Structure: Hexagonal (4H polytype)Bandgap: ~3.26 eVThermal Conductivity: ~4.9 W/cm·K
Open problems
No unresolved problem recorded yet
Related literature
ranked by community starsStructural, electronic, and optical properties of stacking faults and dislocations in 4H-SiC: A first-principles and experimental studyOpen source
Related products and links
Optical SensorsPhotodetectors
Creation and modification trail
1 recordsRecord title: 4H-SiC.
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