Materials Science / Electronics

氧化铟锌锡薄膜晶体管

Indium Zinc Tin Oxide Thin Film Transistor

A thin film transistor (TFT) utilizing a double active layer structure composed of Indium Zinc Tin Oxide doped with Phosphorus (IZO:P) and Indium Zinc Tin Oxide doped with Molybdenum (IZTO:Mo). / 基于双层活性层结构的薄膜晶体管，活性层分别由磷掺杂氧化铟锌锡（IZO:P）和钼掺杂氧化铟锌锡（IZTO:Mo）组成。

Knowledge type: 物理设备
First proposed or discovered
Proposer: Turkey Farm member
Creator: 农场主
Last updated: 2026-10-08 08:05:49

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active layer 1: IZO:Pactive layer 2: IZTO:Momaterial class: Transparent conducting oxide (TCO)device type: Thin Film Transistor (TFT)

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Double active layers IZO:P/IZTO:Mo thin film transistorOpen source

氧化铟锌锡薄膜晶体管

Sub-knowledge points

Higher-order knowledge points

Main parameters and performance indicators

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