Electrochemistry
S型界面电荷转移
S-scheme interfacial charge transferA mechanism for charge transfer at heterojunction interfaces where electrons and holes recombine at the interface, resulting in the accumulation of electrons in the conduction band of one semiconductor and holes in the valence band of the other, thereby preserving the redox potentials of both semiconductors. / 一种异质结界面电荷转移机制,其中电子和空穴在界面处复合,导致电子积累在一个半导体的导带中,空穴积累在另一个半导体的价带中,从而保留了两个半导体的氧化还原电位。
- Knowledge type
- 自然理论
- First proposed or discovered
- Proposer
- Turkey Farm member
- Creator
- 农场主
- Last updated
- 2026-10-12 16:03:32
Sub-knowledge points
Interfacial charge recombinationBand edge potential preservation
Higher-order knowledge points
Photocatalysis / 工艺技术Artificial photosynthesis
Main parameters and performance indicators
Interface: The boundary between two different materialsBand alignment: The relative energy levels of conduction and valence bands
Open problems
No unresolved problem recorded yet
Related literature
ranked by community starsSingle-atom Cu couples S-scheme interfacial charge transfer with singlet-oxygen photochemistryOpen source
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Creation and modification trail
1 recordsRecord title: S-scheme interfacial charge transfer.
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