Materials Science
应变弛豫SiGe层的外延生长
Epitaxial growth of strain relaxed SiGe layersA semiconductor fabrication process involving the deposition of strained relaxed Silicon-Germanium (SiGe) layers using GeCl4 gas. / 一种半导体制造工艺，涉及使用GeCl4气体沉积应变弛豫的硅锗（SiGe）层。
- Knowledge type
- 工艺技术
- First proposed or discovered
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- Turkey Farm member
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- 农场主
- Last updated
- 2026-10-30 22:05:32
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Main parameters and performance indicators
GeCl4: Germanium tetrachloride precursor gasSiGe: Silicon-Germanium alloy materialStrain relaxed: State of the SiGe layer
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Related literature
ranked by community starsEpitaxial growth of strain relaxed SiGe layers grown with GeCl4 for SiGe on nothingOpen source
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1 recordsRecord title: Epitaxial growth of strain relaxed SiGe layers.
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