Materials Science
Mg-C共掺杂GaN中缺陷形成能和电荷跃迁能级的从头算研究
First-principles investigation of defect formation energies and charge transition levels in Mg-C co-doped GaNThe study employs density functional theory (DFT) to calculate the formation energies and charge transition levels of defects in Mg-C co-doped Gallium Nitride (GaN) / 该研究利用密度泛函理论（DFT）计算了Mg-C共掺杂氮化镓（GaN）中的缺陷形成能和电荷跃迁能级
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- 2026-10-29 16:06:34
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Material: Mg-C co-doped GaNMethod: First-principles calculation (DFT)Defects: Formation energies, Charge transition levels
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1 recordsRecord title: First-principles investigation of defect formation energies and charge transition levels in Mg-C co-doped GaN.
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