semiconductor physics
GaAs 隧道结孔径
GaAs Tunnel Junction AperturesGaAs Tunnel Junction Apertures are structures formed by implanting ions into Gallium Arsenide (GaAs) to create openings in the tunnel junction layer. / GaAs 隧道结孔径是通过离子注入在砷化镓（GaAs）隧道结层中形成的具有开口的结构。
- Knowledge type
- 物理设备
- First proposed or discovered
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- Turkey Farm member
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- 农场主
- Last updated
- 2026-11-08 21:05:24
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Main parameters and performance indicators
Material: Gallium Arsenide (GaAs)Process: Ion ImplantationDevice: Tunnel Junction
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Related literature
ranked by community starsCharacterization of GaAs Tunnel Junction Apertures Structured by ImplantationOpen source
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1 recordsRecord title: GaAs Tunnel Junction Apertures.
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