Electronics
InGaAs 变构 HEMT
InGaAs metamorphic HEMTInGaAs metamorphic HEMT / InGaAs 变构高电子迁移率晶体管
- Knowledge type
- 物理设备
- First proposed or discovered
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- Turkey Farm member
- Creator
- 农场主
- Last updated
- 2026-10-25 16:00:51
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Main parameters and performance indicators
Material: InGaAs (Indium Gallium Arsenide)Structure: Metamorphic HEMT (High Electron Mobility Transistor)Key Feature: Side-recess engineering
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Related literature
ranked by community starsImpact of side-recess engineering on electrostatic control, carrier trapping, and high-frequency performance of InGaAs metamorphic HEMTsOpen source
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1 recordsRecord title: InGaAs metamorphic HEMT.
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