Materials Science

各向同性原子层刻蚀

Isotropic atomic layer etching

A surface modification process where material removal occurs uniformly in all directions at the atomic scale, characterized by self-limiting reactions. / 一种表面改性工艺，材料去除在原子尺度上均匀地沿所有方向发生，具有自限制反应特征。

Knowledge type: 工艺技术
First proposed or discovered
Proposer: Turkey Farm member
Creator: 农场主
Last updated: 2026-11-06 20:05:43

Sub-knowledge points

Vacuum environmentX-ray photoelectron spectroscopy (XPS) analysisZirconium oxide (ZrO2) substrate

Higher-order knowledge points

Atomic layer deposition (ALD)Surface cleaningThin film patterning

Main parameters and performance indicators

etchant: Reactive gas or plasma used for removalsubstrate: Material being etched, e.g., zirconium oxidereaction time: Duration of the etching cycle

Open problems

No unresolved problem recorded yet

Related literature

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In vacuo X-ray photoelectron spectroscopy study of the isotropic atomic layer etching mechanism of zirconium oxideOpen source

各向同性原子层刻蚀

Sub-knowledge points

Higher-order knowledge points

Main parameters and performance indicators

Open problems

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