Power Electronics
开尔文源电荷积分
Kelvin-Source Charge IntegrationA fast protection method for Silicon Carbide (SiC) MOSFETs that integrates the charge of the Kelvin-source terminal to detect short-circuit faults. / 一种用于碳化硅MOSFET的快速保护方法，通过积分开尔文源端电荷来检测短路故障。
- Knowledge type
- 工艺技术
- First proposed or discovered
- Proposer
- Turkey Farm member
- Creator
- 农场主
- Last updated
- 2026-10-30 16:06:41
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Main parameters and performance indicators
SiC MOSFET: The semiconductor device being protectedKelvin-Source: The isolated gate-source terminal configurationCharge Integration: The sensing mechanism for fault detection
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Related literature
ranked by community starsFast Unified Short-Circuit Protection for SiC MOSFET via Kelvin-Source Charge IntegrationOpen source
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1 recordsRecord title: Kelvin-Source Charge Integration.
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