semiconductor physics

负电容锗-砷化铝纳米片场效应晶体管

Negative-capacitance germanium-on-AlAs nanosheet FETs

A field-effect transistor architecture featuring a lattice-matched germanium-on-AlAs nanosheet channel and a ferroelectric gate stack to achieve sub-60 mV/dec subthreshold swing and ultra-low-power operation. / 一种采用晶格匹配锗-砷化铝纳米片沟道和铁电栅堆叠的场效应晶体管架构，以实现亚60 mV/dec亚阈值摆幅和超低功耗运行。

Knowledge type: 物理设备
First proposed or discovered
Proposer: Turkey Farm member
Creator: 农场主
Last updated: 2026-11-14 21:06:10

Sub-knowledge points

Negative-capacitance (NC) gate stackFerroelectric Hf0.67Zr0.33O2 layerDual work function engineeringComplementary CMOS inverter

Higher-order knowledge points

Ultra-low-power logic applicationsLattice-matched germanium-on-AlAs nanosheet architecture

Main parameters and performance indicators

aspect ratio: scaled from 1 to 1/3sheet count: from 1 to 3supply voltage (V DD): 0.5 Vthreshold voltage: 0.25 Vdrain-induced barrier lowering (DIBL): 40.5 mV/V (p-type) and 43.0 mV/V (n-type)

Open problems

No unresolved problem recorded yet

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Negative-capacitance germanium-on-AlAs nanosheet FETs for ultra-low-power logic applicationsOpen source

负电容锗-砷化铝纳米片场效应晶体管

Sub-knowledge points

Higher-order knowledge points

Main parameters and performance indicators

Open problems

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