semiconductor physics
非辐射复合
Non-radiative recombinationA process in semiconductors where an electron and a hole recombine without emitting a photon, releasing energy as heat. In InAs, antisite defects are identified as governing this process, which limits carrier lifetime. / 半导体中电子与空穴复合但不发射光子，而是以热的形式释放能量的过程。在InAs中，反位缺陷被认为是控制该过程的主导因素，从而限制了载流子寿命。
- Knowledge type
- 自然理论
- First proposed or discovered
- Proposer
- Turkey Farm member
- Creator
- 农场主
- Last updated
- 2026-11-02 18:05:54
Sub-knowledge points
Impact of antisite defects on carrier dynamicsCorrelation between defect density and non-radiative recombination rates
Higher-order knowledge points
Carrier lifetime in semiconductor materialsOptical properties of InAs
Main parameters and performance indicators
Carrier lifetime: The average time a charge carrier exists before recombiningAntisite defects: Point defects where an atom occupies an incorrect lattice site
Open problems
No unresolved problem recorded yet
Related literature
ranked by community starsAsIn antisite defects govern non-radiative recombination and carrier lifetime in InAs: A combined DFT and PL studyOpen source
Related products and links
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Creation and modification trail
1 recordsRecord title: Non-radiative recombination.
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