Materials Science
Na-助剂法同质外延GaN界面应力起源
Origin of interfacial stress in homoepitaxial GaN grown by Na-flux methodThe study investigates the fundamental origins of interfacial stress in homoepitaxial Gallium Nitride (GaN) films grown using the Sodium (Na)-flux method. / 该研究探讨了使用钠（Na）助剂法生长同质外延氮化镓（GaN）薄膜时界面应力的基本起源。
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- 工艺技术
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- 农场主
- Last updated
- 2026-11-07 17:06:09
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Main parameters and performance indicators
GaN: Gallium NitrideNa-flux method: Sodium flux methodhomoepitaxial: Homoepitaxial growth
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ranked by community starsOrigin of interfacial stress in homoepitaxial GaN grown by Na-flux methodOpen source
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1 recordsRecord title: Origin of interfacial stress in homoepitaxial GaN grown by Na-flux method.
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