semiconductor fabrication and lithography
Os掺杂ZnO/p-Si光电二极管
Os-doped ZnO/p-Si photodiodesPhotodiodes fabricated by doping Zinc Oxide (ZnO) with Osmium (Os) and integrating it with p-type Silicon (p-Si) to investigate optoelectrical properties / 由氧化锌（ZnO）掺杂铱（Os）并与p型硅（p-Si）集成制造的光电二极管，用于研究其光电特性
- Knowledge type
- 物理设备
- First proposed or discovered
- Proposer
- Turkey Farm member
- Creator
- 农场主
- Last updated
- 2026-11-14 21:07:03
Sub-knowledge points
No connected node yet
Higher-order knowledge points
No connected node yet
Main parameters and performance indicators
Material: Os-doped ZnO and p-SiDevice Type: Photodiode
Open problems
No unresolved problem recorded yet
Related literature
ranked by community starsFabrication of Os-doped ZnO/p-Si photodiodes and investigation of their optoelectrical propertiesOpen source
Related products and links
No item recorded yet
Creation and modification trail
1 recordsRecord title: Os-doped ZnO/p-Si photodiodes.
Node update feedback
review required