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Materials Science

Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 薄膜

Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films

Thin films of the relaxor ferroelectric system Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) grown by RF sputtering. / Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 (PIN-PMN-PT) 压电弛豫铁电体系统的薄膜，通过射频溅射生长。

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物理设备
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农场主
Last updated
2026-10-23 08:00:49
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Main parameters and performance indicators

Composition: Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3Growth Method: RF sputteringMaterial Class: Relaxor ferroelectric thin films

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Related literature

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Growth of Si-based high Curie point Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films by RF sputteringOpen source

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automated knowledge publish农场主2026-10-23 08:00:49

Record title: Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films.