Electronics and Optoelectronics
n-Si/p-FeSe异质结的光响应与电子开关
Photoresponse and electronic switching in n-Si/p-FeSe heterojunctionsA heterojunction device composed of n-type Silicon (n-Si) and p-type Iron Selenide (p-FeSe) designed for visible-light communication. The device utilizes the photoresponse properties of the junction to modulate electronic switching for wireless communication applications. / 一种由n型硅和p型硒化铁组成的异质结器件,专为可见光通信设计。该器件利用结的光响应特性来调节电子开关,以实现无线通信应用。
- Knowledge type
- 物理设备
- First proposed or discovered
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- Turkey Farm member
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- 农场主
- Last updated
- 2026-10-31 19:05:31
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Main parameters and performance indicators
n-Si: n-type Silicon semiconductorp-FeSe: p-type Iron Selenide semiconductorheterojunction: Interface between n-Si and p-FeSevisible-light communication: Application domain
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ranked by community starsPhotoresponse and electronic switching in n-Si/p-FeSe heterojunctions designed for visible-light communicationOpen source
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1 recordsRecord title: Photoresponse and electronic switching in n-Si/p-FeSe heterojunctions.
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