semiconductor fabrication and lithography
Si:P RPCVD中的压力驱动表面化学转变：从生长抑制到催化
Pressure-driven surface chemistry shift in Si:P RPCVD: From growth inhibition to catalysisA process-technology phenomenon in Si:P RPCVD where increasing pressure shifts the surface chemical reaction from a growth-inhibiting state to a catalytic state. / Si:P RPCVD工艺中的一种工艺技术现象，随着压力增加，表面化学反应从生长抑制态转变为催化态。
- Knowledge type
- 工艺技术
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- Turkey Farm member
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- 农场主
- Last updated
- 2026-10-30 22:05:19
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Pressure: The driving variable causing the shiftSi:P RPCVD: The specific chemical vapor deposition process
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ranked by community starsPressure-driven surface chemistry shift in Si:P RPCVD: From growth inhibition to catalysisOpen source
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1 recordsRecord title: Pressure-driven surface chemistry shift in Si:P RPCVD: From growth inhibition to catalysis.
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