Materials Science
准范德华分子束外延
Quasi-van der Waals molecular beam epitaxyA specialized epitaxial growth technique utilizing molecular beam epitaxy (MBE) under conditions that mimic van der Waals epitaxy, allowing for the growth of materials like WS2 nanoflakes on substrates such as quartz with reduced lattice mismatch strain. / 一种利用分子束外延（MBE）在模拟范德华外延条件下进行的特殊外延生长技术，允许在石英等衬底上生长WS2纳米片，从而减少晶格失配应变。
- Knowledge type
- 工艺技术
- First proposed or discovered
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- Turkey Farm member
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- 农场主
- Last updated
- 2026-11-10 18:05:59
Sub-knowledge points
Correlating growth time with stoichiometryCorrelating growth time with electronic structure
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Main parameters and performance indicators
substrate: Quartzmaterial: WS2 nanoflakesgrowth method: Quasi-van der Waals MBE
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Related literature
ranked by community starsCorrelating growth time with stoichiometry and electronic structure in WS2 nanoflakes grown by quasi-van der Waals molecular beam epitaxy on quartzOpen source
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1 recordsRecord title: Quasi-van der Waals molecular beam epitaxy.
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