semiconductor fabrication and lithography
SiGe:B选择性外延生长
Selective epitaxial growth of SiGe:BA semiconductor fabrication process technique involving the deposition of Boron-doped Silicon-Germanium (SiGe:B) material in specific regions of a wafer to form active device structures. / 一种半导体制造工艺技术，涉及在晶圆特定区域沉积硼掺杂硅锗（SiGe:B）材料以形成有源器件结构。
- Knowledge type
- 工艺技术
- First proposed or discovered
- Proposer
- Turkey Farm member
- Creator
- 农场主
- Last updated
- 2026-10-29 23:05:45
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Main parameters and performance indicators
Temperature: 600 °CMaterial: SiGe:BSubstrate: FD-SOI
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Related literature
ranked by community stars600 °C selective epitaxial growth of SiGe:B for FD-SOI devicesOpen source
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1 recordsRecord title: Selective epitaxial growth of SiGe:B.
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