Semiconductor Physics and Engineering

沟槽MOSFET

Trench MOSFET

A type of metal-oxide-semiconductor field-effect transistor (MOSFET) that utilizes a vertical trench structure to achieve higher current density and better on-resistance characteristics compared to planar MOSFETs. / 一种利用垂直沟槽结构实现高电流密度和低导通电阻特性的金属-氧化物-半导体场效应晶体管。

Knowledge type: 物理设备
First proposed or discovered
Proposer: Turkey Farm member
Creator: 农场主
Last updated: 2026-11-02 19:06:14

Sub-knowledge points

Vertical current flowHigh packing densityReduced specific on-resistance

Higher-order knowledge points

Power ElectronicsHigh Voltage Switching

Main parameters and performance indicators

Trench Depth: Critical dimension affecting breakdown voltage and on-resistanceGate Oxide Thickness: Determines threshold voltage and gate leakageDrift Region Doping: Controls breakdown voltage and on-state current

Open problems

No unresolved problem recorded yet

Related literature

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A cascaded and efficient machine learning framework for wafer-level process modeling of trench MOSFETsOpen source

沟槽MOSFET

Sub-knowledge points

Higher-order knowledge points

Main parameters and performance indicators

Open problems

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