Electronics
超宽带隙半导体器件
Ultrawide Band Gap Semiconductor DevicesSemiconductor devices utilizing materials with a bandgap greater than 5.5 eV, such as diamond or boron nitride, designed for high-frequency, high-power, and optoelectronic applications. / 利用带隙大于5.5 eV（如金刚石或氮化硼）材料的半导体器件，专为高频、高功率和光电子应用而设计。
- Knowledge type
- 物理设备
- First proposed or discovered
- Proposer
- Turkey Farm member
- Creator
- 农场主
- Last updated
- 2026-11-13 22:05:24
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Main parameters and performance indicators
Bandgap: >5.5 eVMaterial: Diamond, Boron Nitride
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Related literature
ranked by community starsGuest Editorial: Special Issue on Ultrawide Band Gap Semiconductor Devices for RF, Power and Optoelectronic ApplicationsOpen source
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Creation and modification trail
1 recordsRecord title: Ultrawide Band Gap Semiconductor Devices.
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