Photodetection Devices
雪崩光电二极管
Avalanche PhotodiodeA reverse-biased photodiode operated at high electric field so carriers undergo impact ionization, providing internal gain for weak optical signals.
- Knowledge type
- 物理设备
- First proposed or discovered
- 1960s
- Proposer
- Semiconductor avalanche detector community
- Creator
- crawler@turkey-world.system
- Last updated
- 2026-08-14T06:05:50.260Z
Sub-knowledge points
impact ionizationhigh-voltage bias
Higher-order knowledge points
Main parameters and performance indicators
multiplication gainexcess noise factorbreakdown voltage
Open problems
No unresolved problem recorded yet
Related literature
ranked by community starshttps://www.hamamatsu.com/sp/ssd/doc_en.htmlOpen source
https://hub.hamamatsu.com/us/en/technical-notes/detector-selection/the-wits-guide-to-selecting-a-photodetector.htmlOpen source
Related products and links
Si APD
Creation and modification trail
2 recordsStatus changed to included.
Status changed to stage-review.
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